Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate.
Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate.
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DOI：
10.1021/acs.nanolett.9b02149
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发表时间：
2019-06
期刊：
影响因子：
10.8
通讯作者：
C. Volk;A. Chatterjee;Fabio Ansaloni;C. Marcus;F. Kuemmeth
中科院分区：
文献类型：
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作者：
C. Volk;A. Chatterjee;Fabio Ansaloni;C. Marcus;F. Kuemmeth
量子点阵列是实现自旋量子比特的通用平台，因为高带宽传感器点可以与单、双和三点量子比特集成，从而产生快速和高保真的量子比特读出。然而，对于非掺杂硅器件，传感器欧姆的反射率受到二维电子气(2DEG)的有限电阻率的影响，而替代的读出方法仅限于测量量子比特电容，而不是量子比特电荷。通过将表面贴装谐振电路耦合到高阻传感器的柱塞栅极，我们实现了一种与阻性2DGs兼容的快速电荷传感技术。我们通过高速获得Si/SiGe异质结中双点阵列和三点阵列的电荷稳定性图，以及积分时间低至2.4μ的脉冲栅单激发电荷和自旋读出实验证明了这一点。
Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double- and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 μs.