Diffusion properties of Al in ZnTe substrates
Diffusion properties of Al in ZnTe substrates
复制标题
Al在ZnTe衬底中的扩散特性
DOI：
10.1063/1.1287235
复制
发表时间：
2001
影响因子：
3.2
通讯作者：
O. Oda
中科院分区：
文献类型：
--
作者：
M. Hanafusa;Kenji Sato;A. Noda;A. Arakawa;Y. Matsuda;O. Oda
为了在p型ZnTe衬底上制备本征pn结以实现纯绿色发光二极管，采用Al作为扩散种。扫描电子显微镜观察发现，Al扩散区为暗区图像。Al在不同的温度和时间范围内扩散。得到Al在p型衬底中扩散的激活能为1.9±0.1 eV，扩散系数为D=2 0 exp(−1.9/kT) cm2/S。
In order to fabricate intrinsic pn junctions in p-type ZnTe substrates for realizing pure-green light-emitting diodes, Al was used as the diffusion species. We found that the Al diffusion region is observed as a dark region image by scanning electron microscopy. Al was diffused over a wide range of annealing temperatures and times. It was found that the activation energies of Al diffusion into p-type ZnTe substrates were 1.9±0.1 eV and the diffusion coefficient was given by D=20 exp(−1.9/kT) cm2/s.