Ni-doping effect on thermoelectric properties of c-axis-oriented CuFeO2 ceramics
Ni-doping effect on thermoelectric properties of c-axis-oriented CuFeO2 ceramics
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DOI：
10.1016/j.jallcom.2022.164192
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发表时间：
2022-02
影响因子：
6.2
通讯作者：
M. Hagiwara;M. Tato;Daishi Shiojiri;T. Iida;S. Fujihara
中科院分区：
文献类型：
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作者：
M. Hagiwara;M. Tato;Daishi Shiojiri;T. Iida;S. Fujihara
研究了化学掺杂和晶粒取向对铜铁矿型CuFeO 2陶瓷热电性能的综合影响。选择Ni作为掺杂剂，而反应模板晶粒生长方法用于制造晶粒取向的块体陶瓷。采用水热法制备了Ni掺杂α-FeOOH纳米棒，Ni掺杂量为5 mol%，并以此为模板制备了具有c轴择优取向的Ni掺杂CuFeO 2陶瓷。在300 ~ 1100 K温度范围内，测量了Ni掺杂CuFeO 2陶瓷沿着面内方向（垂直于取向轴）的电导率、Seebeck系数和热导率。发现Ni掺杂有效地增加了电导率并降低了热导率，而它保持了约400 μV K−1的高塞贝克系数。因此，轴向取向的CuFeO 2陶瓷掺杂1和3摩尔%的Ni显示出增强的无量纲优值为0.08在900 K。
The combined effect of chemical doping and grain orientation on the thermoelectric properties of delafossite-type CuFeO2ceramics was investigated. Ni was chosen as the dopant, whereas the reactive templated grain growth method was used for the fabrication of grain-oriented bulk ceramics. Nanorods of Ni-dopedα-FeOOH with a nominal Ni content of up to 5 mol% were synthesized by the hydrothermal method and were then used as the template to fabricate Ni-doped CuFeO2ceramics with a preferredc-axis orientation. The electrical conductivity, Seebeck coefficient, and thermal conductivity of the Ni-doped CuFeO2ceramics along the in-plane direction (perpendicular to the orientation axis) were measured at temperatures between 300 and 1100 K. Ni doping was found to effectively increase the electrical conductivity and decrease the thermal conductivity, whereas it maintained a high Seebeck coefficient of around 400 μV K−1. Consequently, thec-axis-oriented CuFeO2ceramics doped with 1 and 3 mol% Ni showed an enhanced dimensionless figure of merit of 0.08 at 900 K.