Impacts of surface sulfurization on Cu(In1-x,Gax)Se2 thin-film solar cells
Impacts of surface sulfurization on Cu(In1-x,Gax)Se2 thin-film solar cells
复制标题
DOI：
10.1002/pip.2554
复制
发表时间：
2015-10-01
影响因子：
6.7
通讯作者：
Nakada, Tokio
中科院分区：
文献类型：
--
作者：
Kobayashi, Taizo;Yamaguchi, Hiroshi;Nakada, Tokio
研究了三步法制备的高质量Cu（In 1-x，Ga-x）Se-2（CIGS）薄膜表面硫化对薄膜性能和电池性能的影响。使用H2S气体在550 ℃下硫化CIGS薄膜30分钟。X射线光电子能谱分析表明，硫原子扩散到CIGS的表面层，并降低了价带底的薄膜硫化。由于硫化过程，开路电压（V-oc）从0.590急剧增加到0.674V。依赖于温度的电流-电压和电容-频率测量也表明，界面复合急剧减少的缺陷的激活能水平的降低后，在缓冲区/CIGS界面附近的硫化。版权所有（C）2014约翰威利父子有限公司
In this work, the impacts of surface sulfurization of high-quality Cu(In1-x,Ga-x)Se-2 (CIGS) thin films deposited by three-stage process on the film properties and the cell performance were investigated. The CIGS thin films were sulfurized at 550 degrees C for 30 min using H2S gas. The X-ray photoelectron spectroscopy analysis revealed that sulfur atoms diffused into the CIGS surface layer and that the valence band minimum was lowered by the film sulfurization. The open circuit voltage (V-oc) drastically increased from 0.590 to 0.674V as a result of the sulfurization process. Temperature-dependent current-voltage and capacitance-frequency measurements also revealed that interface recombination was drastically decreased by the lowering of the defect's activation energy level at the vicinity of the buffer/CIGS interface after the sulfurization. Copyright (C) 2014 John Wiley & Sons, Ltd.