Turn-On Oscillation Damping for Hybrid IGBT Modules
Turn-On Oscillation Damping for Hybrid IGBT Modules
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DOI：
10.24295/cpsstpea.2016.00005
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发表时间：
2016-12
期刊：
影响因子：
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通讯作者：
Nan Zhu;Xingyao Zhang;Min Chen;S. Igarashi;T. Fujihira;Dehong Xu
中科院分区：
文献类型：
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作者：
Nan Zhu;Xingyao Zhang;Min Chen;S. Igarashi;T. Fujihira;Dehong Xu
在以碳化硅二极管为自由二极管的混合IGBT模块中，由于碳化硅二极管的快速开关瞬变和电路寄生电感与其结电容之间的谐振，在开启过程中会发生高频振荡。这种振荡会产生可能影响系统性能的EMI噪声。研究了抑制开通振荡的方法。首先，针对不同的栅极电压和栅极充电电流，研究了栅极驱动参数对开启振荡的影响。在此基础上，提出了一种采用阻尼电路和有源栅极驱动器相结合的抑制开关振荡的新方法。该振荡抑制方法可以在保持碳化硅二极管较低开关损耗的优点的同时，实现最低的EMI噪声。对开机振荡进行了详细的理论分析，并给出了实验结果，验证了所提出的振荡抑制方法的有效性。
In a hybrid IGBT module with SiC diodes as free-wheeling diodes, high frequency oscillation occurs during turn-on due to the fast switching transient of SiC diode and the resonance between circuit parasitic inductances and the junction capacitance of SiC diode. Such oscillation causes EMI noise which may affect the performance of the system. Methods to mitigate the turn-on oscillation are studied. Firstly, the effect of gate drive parameters on turn-on oscillation is investigated with respect to different gate voltages and gate charging currents. Then a novel turn-on oscillation suppression method is proposed with combination of damping circuit and active gate driver. The proposed oscillation suppression method can achieve the lowest EMI noise while remaining the advantage of lower switching loss brought by SiC diodes. Detailed theoretical analysis of the turn-on oscillation is conducted, and experimental results are given to verify the effectiveness of the proposed oscillation suppression method.