Low-temperature sintering and microwave dielectric properties of LiF-doped CaMg1−xZnxSi2O6 ceramics
Low-temperature sintering and microwave dielectric properties of LiF-doped CaMg1−xZnxSi2O6 ceramics
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DOI：
10.1016/j.ceramint.2012.08.058
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发表时间：
2013-03
影响因子：
5.2
通讯作者：
Jie Zhang;Y. Zhou;Zhenxing Yue
中科院分区：
文献类型：
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作者：
Jie Zhang;Y. Zhou;Zhenxing Yue
采用固相反应法合成了透辉石陶瓷CaMg 1 − xZnxSi 2 O 6（x=0 ~ 0.3）。Zn 2+取代Mg 2+可显著降低CaMgSi 2 O 6陶瓷的致密化温度，提高陶瓷的微波介电性能。当x=0.1时，CaMg0.9Zn0.1Si2O6陶瓷可在1200°C下烧结，并具有良好的微波介电性能：εr=7.88，Qf=76，100 GHz，τf=−22.5ppm/°C。LiF的添加被证明是有效的，以降低烧结温度至900°C，而不明显降低介电性能。LiF掺杂量为0.6wt%的CaMg 0.9Zn 0.1Si 2 O 6陶瓷可在900-975°C范围内烧结，具有优良的介电性能，εr = 7.7，Qf = 70，000 GHz，τf = − 25 ppm/°C。这些掺LiF透辉石陶瓷具有烧结温度低、介电性能好等优点，是一种很有前途的LTCC集成化材料。
The diopside ceramics, CaMg1−xZnxSi2O6(x=0–0.3), were synthesized via the solid-state reaction method. Zn2+substitution for Mg2+can markedly lower the densification temperature and improve the microwave dielectric properties of CaMgSi2O6ceramics. For x=0.1, CaMg0.9Zn0.1Si2O6ceramics, can be sintered at 1200°C and exhibit good microwave dielectric properties of εr=7.88, Qf=76,100GHz and τf=−22.5ppm/°C. LiF addition was proved to be effective to lower the sintering temperature to ∼900°C without degrading the dielectric properties apparently. The CaMg0.9Zn0.1Si2O6ceramics doped with 0.6wt% LiF can be sintered in the temperature range of 900–975°C and have excellent dielectric properties of εr∼7.7, Qf∼70,000GHz and τf∼−25ppm/°C. With low sintering temperature and good dielectric properties, these LiF-doped diopside ceramics are promising materials for LTCC integration applications.