Thin Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing
Thin Film Devices Fabricated on Double-Layered Polycrystalline Silicon Films Formed by Green Laser Annealing
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在绿光激光退火形成的双层多晶硅薄膜上制造薄膜器件
DOI：
10.1143/jjap.51.03ca03
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发表时间：
2012
影响因子：
1.5
通讯作者：
Koji Yamasaki
中科院分区：
文献类型：
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作者：
今泉悠佑;植田義幸;松本直樹;仙波伸也;浅田裕法;岸本堅剛;小柳剛;西永慈郎;Koji Yamasaki
我们试图实现薄膜器件作为一个应用程序的双层多晶硅（poly-Si）薄膜形成的绿色激光退火（GLA）。研究了激光辐照能量对GLA法制备双层多晶硅薄膜质量的影响。实现了双层Si膜的同时晶化。通过优化激光能量密度，提高了上多晶硅层的晶粒尺寸和下多晶硅层的结晶质量。此外，薄膜晶体管（TFT）和薄膜光电二极管（TFPD）上制造的上下多晶硅膜在一个单一的过程中已显示出清晰的设备操作。GLA中激光能量密度的优化改善了上下多晶硅膜的质量，从而提高了TFT和TPDP的性能。
We tried to realize thin-film devices as an application of double-layered polycrystalline silicon (poly-Si) films formed by green laser annealing (GLA). We investigated the dependence of the quality of double-layered poly-Si films formed by GLA on laser irradiation energy. Simultaneous crystallization of double-layered Si films was achieved. The grain size of the upper poly-Si layer and the crystalline quality of the lower poly-Si layer are improved by optimization of laser energy density. Moreover, the thin-film transistors (TFTs) and thin-film photodiodes (TFPDs) fabricated on the upper and lower poly-Si films in a single process have shown clear device operations. The optimization of laser energy density in GLA improves the quality of the upper and lower poly-Si films leading to the enhancement of the performance of TFTs and TFPDs.