Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect
Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect
复制标题
通过光电门控效应增强的高灵敏度可见光到红外 MoTe2 光电探测器
DOI：
10.1088/0957-4484/27/44/445201
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发表时间：
2016-11-04
期刊：
影响因子：
3.5
通讯作者：
Chu, Junhao
中科院分区：
文献类型：
--
作者：
Huang, Hai;Wang, Jianlu;Chu, Junhao
二维材料在电子学和光电子学领域具有广阔的应用前景。MoTe 2具有适合于可见光和红外光光电探测的带隙。在这里，我们制作了一个高性能的光电探测器的基础上少层MoTe 2。研究了不同厚度MoTe 2的拉曼光谱特性。基于少层MoTe 2的光电探测器具有宽光谱范围（0.6-1.55 μm）和稳定快速的光响应。在背栅电压为10 V时，对637 nm光的探测率为3.1 × 109 cm Hz 1/2 W − 1，对1060 nm光的探测率为1.3 × 109 cm Hz 1/2 W−1。在宽光谱范围内的可观性能和检测使其成为高性能光电探测器的有前途的材料。
Two-dimensional materials are promising candidates for electronic and optoelectronic applications. MoTe2 has an appropriate bandgap for both visible and infrared light photodetection. Here we fabricate a high-performance photodetector based on few-layer MoTe2. Raman spectral properties have been studied for different thicknesses of MoTe2. The photodetector based on few-layer MoTe2 exhibits broad spectral range photodetection (0.6–1.55 μm) and a stable and fast photoresponse. The detectivity is calculated to be 3.1 × 109 cm Hz1/2 W−1 for 637 nm light and 1.3 × 109 cm Hz1/2 W−1 for 1060 nm light at a backgate voltage of 10 V. The mechanisms of photocurrent generation have been analyzed in detail, and it is considered that a photogating effect plays an important role in photodetection. The appreciable performance and detection over a broad spectral range make it a promising material for high-performance photodetectors.