Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe
Disorder-Induced Localization in Crystalline Pseudo-Binary GeTe-Sb2Te3 Alloys between Ge3Sb2Te6 and GeTe
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DOI：
10.1002/adfm.201500848
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发表时间：
2015-10-01
影响因子：
19
通讯作者：
Wuttig, Matthias
中科院分区：
文献类型：
--
作者：
Jost, Peter;Volker, Hanno;Wuttig, Matthias
在Sb2Te3和GeTe之间的伪二元线上，无序性对晶体化合物的电荷输运有很大的影响。直接在结晶后，阳离子亚晶格上明显的无序使结晶Ge(1)Sb(2)Te(4)成为载流子密度为10(20)cm（-3）量级的Anderson绝缘体。然而，退火诱导无序的减少，并最终触发绝缘体到金属的转变。本文研究了Ge3Sb2Te6和GeTe伪二元组合物的电学性质、光学导电性和结构性质。与之前依赖于退火温度来调整电学性质的研究相反，本研究阐明了化学计量的影响，并证明化学计量可以作为金属到绝缘体转变的替代控制参数。因此，退火温度和化学计量学的结合为裁剪无序提供了丰富的平台，因此，也为电荷的传输提供了丰富的平台。
Disorder has a tremendous impact on charge transport in crystalline compounds on the pseudo-binary line between Sb2Te3 and GeTe. Directly after crystallization, the pronounced disorder on the cation sublattice renders crystalline Ge(1)Sb(2)Te(4)a composition with a carrier density of the order of 10(20) cm(-3)an Anderson insulator. Annealing, however, induces the reduction of disorder and eventually triggers an insulator-to-metal transition. This study presents data on the electrical properties, the optical conductivity, and structural properties of the pseudo-binary compositions between Ge3Sb2Te6 and GeTe. In contrast to the preceding investigations, which rely on the annealing temperature for tuning the electrical properties, this study elucidates the impact of stoichiometry and demonstrates that the stoichiometry may be employed as an alternative control parameter for the metal-to-insulator transition. The combination of annealing temperature and stoichiometry, therefore, provides a rich playground for tailoring disorder and, as a consequence, the transport of charge.