Solid state class DE RF power source
Solid state class DE RF power source
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固态DE级射频电源
DOI：
10.1109/isie.1998.711593
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
J. Greene
中科院分区：
文献类型：
--
作者：
I. de Vries;J. van Nierop;J. Greene
DE类是基于D类LCR串联谐振逆变器的一个新的逆变器系列。DE类的不同之处在于操作方法利用器件输出电容来获得零电压、零电流开关转换。因此，开关损耗（和开关EMI）可以非常低，允许在高频下工作。本文介绍的问题，解决方案，结果和可行性的DE类逆变器作为射频电源的频率高达5 MHz和1千瓦的功率。在此频率下，理论设计要求对死区时间、相位和输出电容有严格限制。这在实际实现逆变器时提出了一些棘手的问题。最重要的问题是：栅极驱动电路，包括布局，高侧栅极驱动的隔离，死区时间的纳秒控制，高侧和低侧栅极驱动脉冲的同步，驱动电压的相位控制和功率器件的总体布局。描述了针对上述问题的一些新颖的解决方案。仿真和实验结果和DE类逆变器的实际功率和频率限制进行了讨论。所提供的信息应适用于MHz DC-DC电源转换器、工业加热射频电源和AM发射机等应用。
Class DE represents a new family of inverters, based on a Class D LCR series resonant inverter. Class DE differs in that the method of operation utilises the devices output capacitance to obtain zero voltage, zero current switching transitions. Hence switching losses (and switching EMI) can be very low, permitting operation to a high frequency. This paper presents the problems, solutions, results and feasibility of a Class DE inverter as an RF power source for frequencies up to 5 MHz and a power of 1 kW. At this frequency, the theoretical design requirements put some tight restrictions on dead time, phase and output capacitance. This presents some formidable problems in practically implementing the inverter. The most significant problems are: the gate drive circuitry including layout, isolation of the high side gate drive, nanosecond control of dead time, synchronization of high and low side gate drive pulses, phase control of the driving voltage and general layout of the power devices. Some novel solutions to the above problems are described. The simulation and experimental results are presented and the practical power and frequency limits of a Class DE inverter are discussed. The information presented should be useful in applications such as MHz DC-DC power converters, RF power sources for industrial heating and AM transmitters.