Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers
Diamond-Incorporated Flip-Chip Integration for Thermal Management of GaN and Ultra-Wide Bandgap RF Power Amplifiers
复制标题
用于GaN和超宽带隙RF功率放大器热管理的Diamond倒装芯片集成
DOI：
10.1109/tcpmt.2021.3091555
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发表时间：
2021-08-01
影响因子：
2.2
通讯作者：
Choi, Sukwon
中科院分区：
文献类型：
--
作者：
Shoemaker, Daniel;Malakoutian, Mohamadali;Choi, Sukwon
GaN射频（RF）功率放大器具有许多优点，包括高功率密度、减小的器件尺寸、高工作电压以及出色的增益和功率附加效率。因此，这些部件正在实现下一代技术，如第五代（5G）基站收发器和国防/航空航天应用，如高性能雷达和通信系统。然而，这些好处可能会被影响性能和可靠性的设备过热所掩盖。针对这一点，研究人员在过去十年中专注于金刚石上GaN集成。然而，可制造性、可扩展性和长期可靠性仍然是新型器件平台商业化的关键挑战。在这项工作中，提出了一种金刚石结合倒装芯片集成方案，利用现有的半导体器件的加工和生长技术。使用实验验证的GaN-on-SiC多指器件模型，对器件级热管理解决方案的冷却效果的理论极限进行了评估。模拟结果表明，通过采用类似的2 μ m金刚石钝化覆盖层，金热凸块，和商业多晶载体晶片，功率放大器的散热可以有效地路由到封装，这导致结封装热阻低于氮化镓金刚石高电子迁移率晶体管（HEMT）。此外，模拟结果表明，这种方法是更有前途的降低新兴的超宽带隙器件的器件热阻的基础上beta-Ga 2 O3和AlGaN，低于今天的国家的最先进的金刚石上GaN的HEMT。
GaN radio frequency (RF) power amplifiers offer many benefits including high power density, reduced device footprint, high operating voltage, and excellent gain and power-added efficiency. Accordingly, these parts are enabling next-generation technologies such as fifth-generation (5G) base transceiver stations and defense/aerospace applications such as high-performance radar and communication systems. However, these benefits can be overshadowed by device overheating that compromises the performance and reliability. In response to this, researchers have focused on GaN-on-diamond integration during the past decade. However, manufacturability, scalability, and long-term reliability remain as critical challenges toward the commercialization of the novel device platform. In this work, a diamond-incorporated flip-chip integration scheme is proposed that takes advantage of existing semiconductor device processing and growth techniques. Using an experimentally validated GaN-on-SiC multifinger device model, the theoretical limit of the cooling effectiveness of the device-level thermal management solution has been evaluated. Simulation results show that by employing a similar to 2 mu m diamond passivation overlayer, gold thermal bumps, and a commercial polycrystalline carrier wafer, the power amplifier's dissipated heat can be effectively routed toward the package, which leads to a junction-to-package thermal resistance lower than GaN-on-diamond high electron mobility transistors (HEMTs). Furthermore, simulation results show that this approach is even more promising for lowering the device thermal resistance of emerging ultra-wide bandgap devices based on beta-Ga2O3 and AlGaN, below that for today's state-of-the-art GaN-on-diamond HEMTs.