High-Precision Alignment and Bonding System for the Fabrication of 3-D Nanostructures
High-Precision Alignment and Bonding System for the Fabrication of 3-D Nanostructures
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DOI：
10.1109/jmems.2007.904950
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发表时间：
2007-10
影响因子：
2.7
通讯作者：
S. Kawashima;M. Imada;K. Ishizaki;S. Noda
中科院分区：
文献类型：
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作者：
S. Kawashima;M. Imada;K. Ishizaki;S. Noda
我们成功开发了一种高精度的晶圆对准和键合系统，用于制造各种3D纳米结构。为了在晶片键合过程中高精度地控制晶片位置，我们改进了传统掩模对准平台的设计。结合应力传感器来测量两个晶片之间的负载。此外，通过光学干涉测量系统监测晶片的平行度。为了同时确定和方向上的对准误差，我们设计了一种由交叉游标尺组成的对准方法。我们证明了新的对准和键合系统使我们能够实现精确的3-D光子晶体，其对准误差最多< 100 nm，并且我们表明迄今为止实现的最佳实验误差< 25 nm。由于该系统具有更容易和直观地确定两个晶片的绝对位置的优点，因此它可以应用于各种各样的纳米级多层器件的制造。
We successfully developed a high-precision wafer alignment and bonding system for the fabrication of a variety of 3-D nanostructures. To control the wafer positions with high accuracy during the wafer-bonding process, we improved upon a design of the conventional mask-alignment stage. A stress sensor was incorporated to measure the load between the two wafers. In addition, the parallelism of the wafers was monitored by an optical interferometry system. To determine alignment errors in both the and directions simultaneously, we devised an alignment method consisting of crossed vernier scales. We demonstrated that the new alignment and bonding system allowed us to realize precise 3-D photonic crystals with the alignment inaccuracy of < 100 nm at most, and we show that the best experimental error achieved to date was < 25 nm. As this system has the benefit of more readily and intuitively determining the absolute positions of the two wafers, it can be applied to the fabrication of a wide variety of nanoscale multilayer devices.