High efficiency microwave diode oscillators
High efficiency microwave diode oscillators
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高效率微波二极管振荡器
DOI：
10.1049/el:19921080
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发表时间：
1992
影响因子：
1.1
通讯作者：
D. Neikirk
中科院分区：
文献类型：
--
作者：
S. Javalagi;V. K. Reddy;K. Gullapalli;D. Neikirk
本文介绍了采用AlAs/InGaAs量子阱注入渡越二极管的极高效率微波振荡器的工作数据。实现了高达50%的DC到RF功率转换效率，据作者所知，这是针对双端子半导体器件的连续波（CW）操作所报道的最高效率。
Data on the operation of very high efficiency microwave oscillators using AlAs/InGaAs quantum well injection transit (QWITT) diodes are presented. A DC-to-RF power conversion efficiency as high as 50% was achieved, which, to the authors' knowledge, is the highest efficiency reported for continuous wave (CW) operation of a two terminal semiconductor device.