Effect of spin drift on spin accumulation voltages in highly doped silicon
Effect of spin drift on spin accumulation voltages in highly doped silicon
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自旋漂移对高掺杂硅中自旋积累电压的影响
DOI：
10.1063/1.4754285
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发表时间：
2011
影响因子：
4
通讯作者：
Ait.
中科院分区：
文献类型：
--
作者：
M. Kameno;E. Shikoh;T. Shinjo;T. Sasaki;T. Oikawa;Yoshishige Suzuki;Toshio Suzuki;M. S. O. Univ.;T. Co.;Ait.
采用非局域三端（NL-3 T）和四端（NL-4 T）方法研究了自旋漂移对高掺杂硅（Si）中自旋积累的影响，阐明了自旋漂移对NL-3 T器件中自旋积累电压的调制作用，以及采用修正的自旋漂移-扩散方程可以准确地提取自旋寿命.提取的自旋寿命为4-7 ns，这是略短于本征自旋寿命（8 ns）在NL-4 T方法中测量的相同的Si器件，因为自旋漂移。阐明了用NL-3 T方法精确估算Si自旋寿命时应考虑自旋漂移效应。
We investigated the effect of spin drift on spin accumulation in highly doped silicon (Si) by using a non-local three-terminal (NL-3T) and four-terminal (NL-4T) methods, and have clarified that the spin accumulation voltages in a NL-3T device were modulated due to spin drift and that spin lifetime can be accurately extracted by employing a modified spin drift-diffusion equation. The extracted spin lifetime is 4-7 ns, which is slightly shorter than the intrinsic spin lifetime (8 ns) measured in the NL-4T method in the same Si device because of spin drift. It is elucidated that the spin drift effect should be considered for the precise estimation of spin lifetime in Si by NL-3T method.