Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography
Three-dimensional measurement of Mg dopant distribution and electrical activity in GaN by correlative atom probe tomography and off-axis electron holography
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通过相关原子探针断层扫描和离轴电子全息术三维测量 GaN 中的镁掺杂分布和电活性
DOI：
10.1063/1.5125188
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发表时间：
2020
影响因子：
3.2
通讯作者：
D. Cooper
中科院分区：
文献类型：
--
作者：
L. Amichi;I. Mouton;E. Di Russo;V. Boureau;F. Barbier;A. Dussaigne;A. Grenier;P. Jouneau;C. Bougerol;D. Cooper
通过相关原子探针断层扫描（APT）和离轴电子全息术研究了金属有机化学气相沉积生长的氮化镓（GaN）中p型掺杂（Mg）的分布和电活性。 APT 结果表明，高 Mg 浓度促进富镁簇的形成。这与金字塔反转域（PID）的形成有关。 APT 提供的簇外掺杂浓度的直接测量表明，当 Mg 浓度高于 7 × 1019 cm−3 时，p 型电活动饱和。离轴电子全息图提供的静电势图证实，尽管 APT 揭示了存在高密度的富镁簇，但在掺杂剂浓度最高为 2 × 1020 cm−3 的区域中实现了最高载流子浓度。这些技术的相关性表明PID并不是静电势降低的主要原因。通过相关原子探针断层扫描（APT）和离轴电子全息术研究了金属有机化学气相沉积生长的氮化镓（GaN）中p型掺杂（Mg）的分布和电活性。 APT 结果表明，高 Mg 浓度促进富镁簇的形成。这与金字塔反转域（PID）的形成有关。 APT 提供的簇外掺杂浓度的直接测量表明，当 Mg 浓度高于 7 × 1019 cm−3 时，p 型电活动饱和。离轴电子全息图提供的静电势图证实，尽管 APT 揭示了存在高密度的富镁簇，但在掺杂剂浓度最高为 2 × 1020 cm−3 的区域中实现了最高载流子浓度。这些技术的相关性表明 PID 并不是静电势降低的主要原因。
The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown by metal organic chemical vapor deposition was investigated by correlating atom probe tomography (APT) and off-axis electron holography. APT results revealed that high Mg concentrations promote the formation of Mg-rich clusters. This is associated with the formation of pyramidal inversion domains (PIDs). The direct measurement of the doping concentration outside the clusters provided by APT suggests a saturation in the p-type electrical activity for Mg concentrations above 7 × 1019 cm−3. Maps of the electrostatic potential provided by off-axis electron holography confirm that the highest carrier concentration was achieved in the regions with the highest dopant concentration of 2 × 1020 cm−3, despite the presence of a high density of Mg-rich clusters revealed by APT. The correlation of these techniques suggests that PIDs are not the major cause of the reduction in electrostatic potential.The distribution and electrical activity of p-type doping (Mg) in gallium nitride (GaN) grown by metal organic chemical vapor deposition was investigated by correlating atom probe tomography (APT) and off-axis electron holography. APT results revealed that high Mg concentrations promote the formation of Mg-rich clusters. This is associated with the formation of pyramidal inversion domains (PIDs). The direct measurement of the doping concentration outside the clusters provided by APT suggests a saturation in the p-type electrical activity for Mg concentrations above 7 × 1019 cm−3. Maps of the electrostatic potential provided by off-axis electron holography confirm that the highest carrier concentration was achieved in the regions with the highest dopant concentration of 2 × 1020 cm−3, despite the presence of a high density of Mg-rich clusters revealed by APT. The correlation of these techniques suggests that PIDs are not the major cause of the reduction in electrostatic potential.
影响因子：
4
作者：
J. Park;T. Niermann;D. Berger;A. Knauer;I. Koslow;M. Weyers;M. Kneissl;M. Lehmann
通讯作者：
J. Park;T. Niermann;D. Berger;A. Knauer;I. Koslow;M. Weyers;M. Kneissl;M. Lehmann