DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications
DC-35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications
复制标题
DC-35 GHz 低损耗 MMIC 开关，采用 50 nm 门长 MHEMT 技术，适用于超低功耗应用
DOI：
10.1049/el.2009.0684
复制
发表时间：
2009
影响因子：
1.1
通讯作者：
Hwang C
中科院分区：
文献类型：
--
作者：
Hwang C
提出了一种采用高性能50 nm栅长变形高电子迁移率晶体管（MHEMT）的宽带低损耗、超低功耗发射/接收开关。单刀双掷（SPDT）单片开关利用漏极接触电极共享的概念，使用两个手指MHEMT。选择了最佳的MHEMT栅宽，以实现低损耗、高隔离度和电路紧凑性。该开关具有DC至35 GHz的宽带工作特性，插入损耗小于1.9 dB，隔离度优于27 dB，P1 dB优于12 dBm，直流功耗小于6 µW。
A broadband low-loss, ultra-low-power consumption transmit/receive switch using high-performance 50 nm gate-length metamorphic high electron mobility transistors (MHEMTs) is presented. The single pole double throw (SPDT) monolithic switch utilises a drain contact electrode sharing concept using a two-finger MHEMT. An optimal gate width of the MHEMT was chosen for low-loss, high-isolation performance and circuit compactness. The switch shows a broadband operation from DC to 35 GHz with insertion loss less than 1.9 dB, isolation better than 27 dB, andP1dBbetter than 12 dBm with DC power consumption of less than 6 µW.