Photoluminescence of single-walled carbon nanotubes in field-effect transistors
Photoluminescence of single-walled carbon nanotubes in field-effect transistors
复制标题
场效应晶体管中单壁碳纳米管的光致发光
DOI：
10.1088/0957-4484/17/2/035
复制
发表时间：
2006
期刊：
影响因子：
3.5
通讯作者：
T. Mizutani
中科院分区：
文献类型：
--
作者：
Y. Ohno;S. Kishimoto;T. Mizutani
我们研究了置于场效应晶体管结构中的单个单壁碳纳米管 (SWNT) 的光致发光 (PL)。 SWNTs悬浮在空气中，从而获得强PL。当向设备施加外部偏置电压时，检测不到光谱变化，但强度急剧增加或减少。这种行为可以通过电场从电极注入/提取载流子来解释。对于空气中的 p 型 FET，通过施加小的负栅极偏压，由于空穴注入，PL 强度增加。器件在真空中加热后，在零栅极偏压下获得最大 PL 强度。这可以通过单壁碳纳米管和接触电极之间界面的变化来解释。 PL 强度的漏极场依赖性表现出单调下降，这可以通过 SWNT 中光激发载流子的复合寿命和渡越时间之间的竞争来解释。使用单壁碳纳米管中载流子密度的解析稳态速率方程，评估了复合寿命和载流子渡越时间之间的关系。还估计了载流子饱和速度。
We have studied the photoluminescence (PL) of individual single-walled carbon nanotubes (SWNTs) placed in field-effect transistor structures. The SWNTs were suspended in the air so that strong PL was obtained. When an external bias voltage was applied to the device, no spectral changes could be detected, but the intensity drastically increased or decreased. This behaviour is explained by the injection/extraction of carriers from/to the electrodes by the electric field. In the case of p-type FETs in the air, PL intensity increased due to hole injection by applying a small negative gate bias. After the device was heated in vacuum, the maximum PL intensity was obtained at zero gate bias. This can be explained by the change in the interface between the SWNT and contact electrodes. The drain field dependence of the PL intensity shows a monotonic decrease, which is explained by a competition between the recombination lifetime and transit time of photo-excited carriers in the SWNT. Using analytical steady-state rate equations on carrier density in the SWNT, the relation between the recombination lifetime and carrier transit time has been evaluated. The carrier saturation velocity has also been estimated.
影响因子：
4
作者：
Y. Ohno;S. Kishimoto;T. Mizutani;T. Okazaki;H. Shinohara
通讯作者：
Y. Ohno;S. Kishimoto;T. Mizutani;T. Okazaki;H. Shinohara