Low-Voltage Organic Electronics Based on a Gate-Tunable Injection Barrier in Vertical graphene-organic Semiconductor Heterostructures
Low-Voltage Organic Electronics Based on a Gate-Tunable Injection Barrier in Vertical graphene-organic Semiconductor Heterostructures
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DOI：
10.1021/nl5029599
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发表时间：
2015-01-01
期刊：
影响因子：
10.8
通讯作者：
Kymissis, Ioannis
中科院分区：
文献类型：
--
作者：
Hlaing, Htay;Kim, Chang-Hyun;Kymissis, Ioannis
石墨烯与无机半导体、氧化物半导体和新出现的层状材料的垂直集成最近被证明是一条很有前途的新型电子和光电子器件的途径。在这里，我们报道了基于石墨烯和有机半导体垂直异质结的有机薄膜晶体管。在这些薄的异质结器件中，电流调制是通过施加栅极电压来调节半导体/石墨烯界面的注入势垒来实现的。用C-60薄层制造的N沟道器件具有室温通断比>；10(4)和高达44 mAcm的电流密度(2)。由于垂直结构固有的超短通道，该器件可在200 mV的驱动电压下完全工作。研究了一种互补p沟道器件，并给出了一种基于两个互补晶体管的逻辑逆变器。石墨烯通过简单、可扩展和低温制造工艺将石墨烯与有机半导体垂直集成，为实现灵活、透明的有机电子器件和光电子器件开辟了新的机会。
The vertical integration of graphene with inorganic semiconductors, oxide semiconductors, and newly emerging layered materials has recently been demonstrated as a promising route toward novel electronic and optoelectronic devices. Here, we report organic thin film transistors based on vertical heterojunctions of graphene and organic semiconductors. In these thin heterostructure devices, current modulation is accomplished by tuning of the injection barriers at the semiconductor/graphene interface with the application of a gate voltage. N-channel devices fabricated with a thin layer of C-60 show a room temperature on/off ratio >10(4) and current density of up to 44 mAcm(2). Because of the ultrashort channel intrinsic to the vertical structure, the device is fully operational at a driving voltage of 200 mV. A complementary p-channel device is also investigated, and a logic inverter based on two complementary transistors is demonstrated. The vertical integration of graphene with organic semiconductors via simple, scalable, and low-temperature fabrication processes opens up new opportunities to realize flexible, transparent organic electronic, and optoelectronic devices.