Free-layer-thickness-dependence of the spin galvanic effect with spin rotation symmetry
Free-layer-thickness-dependence of the spin galvanic effect with spin rotation symmetry
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DOI：
10.1063/1.5048012
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发表时间：
2018-09-17
影响因子：
4
通讯作者：
Fan, Xin
中科院分区：
文献类型：
--
作者：
Aljuaid, Wafa S.;Allen, Shane R.;Fan, Xin
与传统的逆自旋霍尔效应不同，铁磁性金属表面附近的自旋-轨道耦合导致具有对称性的自旋-电荷转换。我们以前在自旋阀的温度梯度下观察到了这种具有自旋旋转对称性的自旋电偶效应(SGE-SR)。在这里，我们发现有两个过程对SGE-SR有贡献，其中一个过程对自由磁层厚度敏感，另一个过程只与自由层的界面有关。在自由层厚度相关研究的基础上，推算出Py的自旋扩散长度为3.9+/-0.2 nm。我们还提出SGE-SR可以帮助定量研究金属磁性薄膜中的自旋塞贝克效应。由AIP出版公司出版。
Spin-orbit coupling near the surface of a ferromagnetic metal gives rises to spin-to-charge conversion with symmetry different from the conventional inverse spin Hall effect. We have previously observed this spin galvanic effect with spin rotation symmetry (SGE-SR) in a spin valve under a temperature gradient. Here, we show there are two processes that contribute to the SGE-SR, one of which is sensitive to the free magnetic layer thickness, while the other only depends on the interface of the free layer. Based on the free-layer-thickness-dependent study, we extrapolate the spin diffusion length of Py to be 3.9 +/- 0.2 nm. We also propose that the SGE-SR can help to quantitatively study the spin Seebeck effect in metallic magnetic films. Published by AIP Publishing.