Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy
Advanced Contactless Analysis of Plasma-Induced Damage on Si by Temperature-Controlled Photoreflectance Spectroscopy
复制标题
通过温控光反射光谱对硅上等离子体引起的损伤进行先进的非接触式分析
DOI：
10.1143/jjap.50.08kd03
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发表时间：
2011
影响因子：
1.5
通讯作者：
Kouichi Ono
中科院分区：
文献类型：
--
作者：
Asahiko Matsuda;Yoshinori Nakakubo;Yoshinori Takao;Koji Eriguchi;Kouichi Ono
我们提出了一种先进的光反射（PR）光谱技术，作为一种方法，用于非接触分析等离子体引起的损伤（物理损伤）的Si。被Ar等离子体损伤的Si晶片被放置在能够通过液氮冷却样品的测量台上。与300 K下的光谱相比，90 K下的信号强度通过冷却而增加。在90 K处发现了一个严重损伤样品的光谱峰，这在300 K处是很困难的。通过分析光谱参数，计算了等离子体暴露引起的表面电位变化（Δ Vs）。捕获电荷的面密度由Δ Vs估算。讨论了PR谱的温度依赖性，认为在较低的温度范围内，电子-声子相互作用的降低是PR谱信号强度增加的主要原因。该方法扩展了基于PR的损伤分析的适用范围。
We propose an advanced photoreflectance (PR) spectroscopy technique, for use as a method for the contactless analysis of plasma-induced damage (physical damage) on Si. Si wafers damaged by Ar plasma were placed on a measurement stage capable of sample cooling by liquid nitrogen. In comparison to the spectra at 300 K, the signal intensity at 90 K was increased by cooling. A spectral peak of a heavily-damaged sample was identified at 90 K, which was difficult at 300 K. Changes in the surface potential induced by plasma exposure (ΔV s) were calculated by analyzing the spectral parameters. Areal densities of trapped charges were estimated from ΔV s. The temperature dependence of the PR spectra was discussed, and the primary cause of the increase in signal intensity was attributed to the reduced electron–phonon interactions in a lower temperature range. The proposed technique expands the applicable range of PR-based damage analysis.