Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy
Gallium nitride surface preparation optimised using in situ scanning tunnelling microscopy
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DOI:
10.1016/s0169-4332(03)00011-4
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发表时间:
2003-05
影响因子:
6.7
通讯作者:
R. Oliver;C. Nörenberg;M. G. Martı́n;A. Crossley;M. R. Castell;G. Briggs
中科院分区:
文献类型:
--
作者:
R. Oliver;C. Nörenberg;M. G. Martı́n;A. Crossley;M. R. Castell;G. Briggs