Probing Depth Study of Conversion Electron/He Ion Yield XAFS Spectroscopy on Strontium Titanate Thin Films
Probing Depth Study of Conversion Electron/He Ion Yield XAFS Spectroscopy on Strontium Titanate Thin Films
复制标题
钛酸锶薄膜转换电子/氦离子产率 XAFS 光谱探测深度研究
DOI：
10.2116/analsci.15.255
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发表时间：
1999
影响因子：
1.6
通讯作者：
Y. Hiroshima
中科院分区：
文献类型：
--
作者：
E. Yanase;I. Watanabe;M. Harada;Masao Takahashi;Y. Dake;Y. Hiroshima
研究了转换电子/He离子产额XAFS方法的探测深度，以便将这些方法应用于估算厚衬底上钛酸锶薄膜的局部畸变。制备了几种不同厚度的钛酸锶薄膜样品，得到了Sr和Ti K边的边跳幅度。通过传统的指数拟合，估计Sr K-边缘的探测深度为300 nm，Ti K-边缘的探测深度为30 nm。用转换电子和He离子产额法测得的XAFS谱和探测深度基本相同，但背景曲线不同。
The probing depth of conversion electron/He ion yield XAFS methods has been studied in order to apply these methods to estimate the local distortion of strontium titanate thin films on thick substrates. Several strontium titanate thin film samples with different thicknesses were prepared and the edge-jump amplitudes at both the Sr and Ti K-edges were obtained. The probing depths were estimated to be 300 nm for the Sr K-edge and 30 nm for the Ti K-edge by the conventional exponential fit. The XAFS spectra and the probing depths measured by conversion electron and He ion yield methods is much the same, though the background curves are different.