Conductance oscillations in a two-dimensional impurity band
Conductance oscillations in a two-dimensional impurity band
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二维杂质带中的电导振荡
DOI：
10.1088/0022-3719/12/16/003
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发表时间：
1979
期刊：
影响因子：
--
通讯作者：
M. Pepper
中科院分区：
文献类型：
--
作者：
M. Pepper
在低温下，当n型GaAs杂质带的传导被限制在二维时，观察到了一种新的效应。当载流子浓度小于1011 cm-2时，电导随载流子浓度的变化而振荡。振荡可以分解成简单的系列与平均电子间距的最小周期函数。通过增加负责传输的电场来实现对主系列的抑制和对辅助系列的增强;这导致在某些载流子浓度下的差分负电阻。这种效应可能是由于库仑排斥导致的电子有序化引起的，尽管很难想象这是如何在施主的随机阵列中发生的，而且目前还没有模型来解释这种效应。
A new effect has been observed at low temperatures when conduction is restricted to two dimensions in an n-type GaAs impurity band. When the carrier concentration is less than 1011 cm-2 the conductance is found to oscillate as a function of carrier concentration. The oscillations can be resolved into simple series with the minima periodic functions of the mean electron separation. Suppression of the main series and enhancement of a subsidiary series is achieved by increasing the electric field responsible for transport; this results in differential negative resistance at certain carrier concentrations. The effect may possibly arise from an ordering of the electrons by Coulomb repulsion, although it is difficult to envisage how this can happen in a random array of donors and there is at present no model to explain the effect.