Effects of (Bi1/2,Na1/2)TiO3 on the electrical properties of BiFeO3-based thin films
Effects of (Bi1/2,Na1/2)TiO3 on the electrical properties of BiFeO3-based thin films
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DOI：
10.7567/jjap.55.10ta17
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发表时间：
2016-09
影响因子：
1.5
通讯作者：
J. Choi;T. Yoshimura;N. Fujimura
中科院分区：
文献类型：
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作者：
J. Choi;T. Yoshimura;N. Fujimura
采用共溅射法在LaNiO 3/Si衬底上制备了（100）取向的（1 − x）BiFeO 3-x（Bi 1/2，Na 1/2）TiO 3（BF-BNT）薄膜（x = 0.05）。结果表明，BF-BNT薄膜比相同条件下沉积的BiFeO 3薄膜具有更好的铁电和压电性能，特别是在450 °C的沉积温度下。在BF膜中加入少量BNT（x = 0.05）可使介电常数提高到480。在450 °C下沉积的BF-BNT膜的BF-BNT膜压电系数（d33（AFM））为100 μ m/V，这与具有其他钙钛矿或稀土元素替代的BF基膜的最佳值相当。
(100)-oriented (1 − x)BiFeO3–x(Bi1/2,Na1/2)TiO3 (BF–BNT) thin films with x = 0.05 were grown on LaNiO3/Si substrate by co-sputter method. It was found that BF–BNT films show better ferroelectric and piezoelectric properties than the BiFeO3 films deposited under the same condition, especially at the deposition temperature of 450 °C. The addition of small amount of BNT (x = 0.05) to BF films increases the dielectric constant to 480. The BF–BNT film piezoelectric coefficient (d33(AFM)) of the BF–BNT film deposited at 450 °C is ∼100 pm/V, which is comparable to the best value of BF-based films with substitutions of other perovskite or rare-earth elements.