Chirality-induced intrinsic charge rectification in a tellurium-based field-effect transistor
Chirality-induced intrinsic charge rectification in a tellurium-based field-effect transistor
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碲基场效应晶体管中手性诱导的本征电荷整流
DOI：
10.1103/physrevb.106.l220403
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发表时间：
2022
影响因子：
3.7
通讯作者：
Yamamoto Hiroshi M.
中科院分区：
文献类型：
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作者：
Hirobe Daichi;Nabei Yoji;Yamamoto Hiroshi M.
我们报道了在磁场作用下，手征半导体Te中无p-n结的本征电荷整流的栅诱导增强。由于选通将化学势移动到Te的价带最大值，电荷整流效率提高了百倍。结合模型计算，我们将电荷整流归因于手性能带结构的不对称性。我们还表明，受这种不对称性的载流子密度增加的鞍点结构附近的价带最大值，这进一步提高了栅极可调电荷整流连同其改进的可切换性和热鲁棒性。
We report gate-induced enhancement of intrinsic charge rectification without p-n junctions in chiral semiconductor Te under magnetic field. As gating shifts the chemical potential to the valence band maximum of Te, the charge rectification efficiency is enhanced hundredfold. By integrating model calculations, we attribute the charge rectification to the-induced asymmetry of the chiral band structure. We also show that the carrier density subject to this asymmetry is augmented by a saddle-point structure near the valence band maximum, which further enhances the gate-tunable charge rectification together with its improved switchability and thermal robustness.