A study of resist flow during nanoimprint lithography
A study of resist flow during nanoimprint lithography
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DOI：
10.1016/j.mee.2004.12.083
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发表时间：
2005-03-01
影响因子：
2.3
通讯作者：
Thoms, S
中科院分区：
文献类型：
--
作者：
Macintyre, DS;Thoms, S
我们开发了一种直接观察纳米压印光刻产生的抗蚀剂流动的方法。将基准网格嵌入被压印的聚合物层中，我们观察了压印后其变形。该嵌入式网格由两个抗蚀剂形成，其中下部被图案化，然后涂有第二抗蚀剂层以形成平坦表面。使用 Normaski 干涉的光学显微镜、原子力显微镜 (AFM) 和扫描电子显微镜 (SEM) 均用于观察压印后的抗蚀剂，并揭示了水平和垂直方向的扭曲。压印是在各种条件下进行的，我们报告了在许多不同图案元素周围观察到的抗蚀剂流动。在沟槽缺陷周围没有观察到网格变形。 (c) 2004 Elsevier B.V. 保留所有权利。
We have developed a method to directly observe the flow of resist arising from nanoimprint lithography. A fiducial grid was embedded in the polymer layer being imprinted, and we observed its distortions after imprinting. This embedded grid was formed by two resists, the lower of which was patterned and then overcoated with a second resist layer to form a planar surface. Optical microscopy using Normaski interference, atomic force microscopy (AFM) and scanning electron microscopy (SEM) were all used to observe the resist after imprinting and revealed distortions in both the horizontal and vertical directions. Imprinting was carried out under various conditions and we report on the observed resist flow around a number of different pattern elements. No distortions of the grid were observed around trench defects. (c) 2004 Elsevier B.V. All rights reserved.