A continuous-wave hybrid AlGaInAs-silicon evanescent laser
A continuous-wave hybrid AlGaInAs-silicon evanescent laser
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DOI：
10.1109/lpt.2006.874690
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发表时间：
2006-05-01
影响因子：
2.6
通讯作者：
Bowers, JE
中科院分区：
文献类型：
--
作者：
Fang, AW;Park, H;Bowers, JE
我们报道了一种新的激光结构，混合硅倏逝激光器（SEL），它利用了与硅波导结合的偏置AlGaInAs量子阱（qw）。硅波导使用互补的金属氧化物半导体兼容工艺在绝缘体上的硅晶圆上制造，随后使用低温02等离子体辅助晶圆键合与AlGaInAs QW结构结合。SEL中的光模式主要局限于无源硅波导中，并短暂地耦合到III-V有源区域，提供光增益。SEL在1568 nm处发射连续波（CW），阈值为23 mW。连续波工作的最高温度为60℃，室温下单面光纤耦合连续波的最大输出功率为4.5 mW。
We report a novel laser architecture, the hybrid silicon evanescent laser (SEL), that utilizes offset AlGaInAs quantum wells (QWs) bonded to a silicon waveguide. The silicon waveguide is fabricated on a silicon-on-insulator wafer using a complimentary metal-oxide-semiconductor-compatible process, and is subsequently bonded with the AlGaInAs QW structure using low temperature 02 plasma-assisted wafer bonding. The optical mode in the SEL is predominantly confined in the passive silicon waveguide and evanescently couples into the III-V active region providing optical gain. The SEL lases continuous wave (CW) at 1568 nm with a threshold of 23 mW. The maximum temperature for CW operation is 60 degrees C. The maximum single-sided fiber-coupled CW output power at room temperature is 4.5 mW.