Preferential Orientation of Titanium Dioxide Polycrystalline Films Using Atmospheric CVD Technique
Preferential Orientation of Titanium Dioxide Polycrystalline Films Using Atmospheric CVD Technique
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利用常压CVD技术制备二氧化钛多晶薄膜的择优取向
DOI：
10.2109/jcersj.105.551
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发表时间：
1997
影响因子：
1.1
通讯作者：
H. Saitoh
中科院分区：
文献类型：
--
作者：
N. Tanaka;S. Ohshio;H. Saitoh
研究了用气相沉积法制备的二氧化钛多晶薄膜的结晶取向和生长速率。二氧化钛薄膜的沉积速率取决于衬底温度和四异丙醇钛的汽化温度。x射线衍射分析表明，薄膜的生长取向主要随蒸发温度的变化而变化。在相对较低的蒸发温度下，薄膜由以最小沉积速率4nm/s生长的“001”取向柱状晶体组成。相比之下，在较高的蒸发温度下，“100”和“211”取向晶的最大沉积速率为45nm/s。这些结果表明，反应物的浓度是决定各晶面生长速率的因素之一，而反应物的浓度与蒸发温度有很大的关系。
Crystalline orientation and growth rate of titanium dioxide polycrystalline films deposited using an air-opened chemical vapor deposition apparatus were investigated. The deposition rate of the titanium dioxide films depends on the substrate temperature and the vaporizing temperature of titanium tetra-isopropoxide. X-ray diffraction analysis revealed that the growth orientation of the films was mainly varied with the vaporizing temperature. At relatively low vaporizing temperature, the films were consisted of ‹001›-oriented columnar crystals grown at a minimum deposition rate of 4nm/s. In contrast, ‹100›-and ‹211›-oriented crystallites grew with a maximum deposition rate of 45nm/s at relatively high vaporizing temperature. These results suggest that the concentration of reactant, which is strongly dependent upon the vaporizing temperature, is one of factors which decide the growth rate of each crystal face.