Spin Hall magnetoresistance in Pt/Fe3O4 thin films at room temperature
Spin Hall magnetoresistance in Pt/Fe3O4 thin films at room temperature
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室温下 Pt/Fe3O4 薄膜中的自旋霍尔磁阻
DOI：
10.1103/physrevb.90.134424
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发表时间：
2014-10-30
影响因子：
3.7
通讯作者：
Wu, Y. Z.
中科院分区：
文献类型：
--
作者：
Ding, Z.;Chen, B. L.;Wu, Y. Z.
研究了室温下Pt/Fe_3O_4双层膜的角度相关磁电阻效应。基于场相关和角度相关的测量，我们表明，自旋霍尔磁电阻（SMR）在室温下存在于Pt/Fe_3O_4系统，虽然Fe_3O_4层不是一个很好的绝缘体。对于足够薄的Fe_3O_4膜，Pt/Fe_3O_4中的SMR贡献可以清楚地识别。此外，Pt/Fe 3 O 4薄膜的SMR与电流方向无关，这与单晶Fe 3 O 4薄膜的各向异性磁电阻不同。
We studied angle-dependent magnetoresistance in Pt/Fe3O4 bilayers at room temperature. Based on field-dependent and angle-dependent measurements, we show that spin Hall magnetoresistance (SMR) exists in the Pt/Fe3O4 system at room temperature, although the Fe3O4 layer is not a good insulator. The SMR contribution in Pt/Fe3O4 can be clearly identified for thin enough Fe3O4 films. Moreover, the SMR in Pt/Fe3O4 does not rely on the current direction, which is different from the anisotropic magnetoresistance in single-crystalline Fe3O4 films.