Analytic Modeling Of Charge Diffusion In Charge-Coupled-Device Imagers
Analytic Modeling Of Charge Diffusion In Charge-Coupled-Device Imagers
复制标题
电荷耦合器件成像仪中电荷扩散的分析建模
DOI：
--
复制
发表时间：
1987
期刊：
影响因子：
--
通讯作者：
G. Hopkinson
中科院分区：
文献类型：
--
作者：
G. Hopkinson
取决于器件结构以及CCD内存在的电场，硅内产生的电荷云在被收集在掩埋沟道处之前通常有相当长的时间向外扩散和扩散。这种电荷扩散对用于软X射线、光学和高能粒子成像的CCD的空间和能量分辨率具有重要影响。进一步的理论，这是目前正在开发的CCD的性能方面，以扩大其光谱响应，同时尽量减少耗尽层以下的无场区的厚度。研究表明，无场扩散产生的电荷云轮廓具有宽翼，即使无场区域厚度约为1 μ m，也会导致相邻像素之间显着的电荷分裂。公式也提出了在该领域的区域和基板的扩散。
Depending on the device structure and hence the electric field present within a CCD, there is often a considerable time for charge clouds generated within the silicon to diffuse and spread outward before being collected at the buried channel. This charge spreading has an important effect on the spatial and energy resolution of CCDs used for soft x-ray, optical, and high energy particle imaging. Further theory on this is presented with regard to the performance of CCDs currently under development, to broaden their spectral response while minimizing the thickness of the field-free region below the depletion layer. It is shown that the charge cloud profiles resulting from field-free diffusion have broad wings that can lead to significant charge splitting between adjacent pixels, even for field-free region thicknesses ~1 um. Formulas are also presented for diffusion in the field region and the substrate.