Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor
Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor
复制标题
Si1−xGex 缓冲层对应变 Si n 沟道金属氧化物半导体场效应晶体管迁移率增强的作用
DOI：
10.1063/1.125197
复制
发表时间：
1999
影响因子：
4
通讯作者：
M. Miyao
中科院分区：
文献类型：
--
作者：
N. Sugii;K. Nakagawa;S. Yamaguchi;M. Miyao
应变硅n沟道金属氧化物半导体场效应晶体管（MOSFET）是在分子束外延生长的应变硅上制造的，具有各种Si 1 −xGex缓冲层。具有Si 1 −xGex（x=0.2，0.3）渐变缓冲层的n-MOSFET的有效电子迁移率比无应变Si n-MOSFET高60%。然而，在低温生长的Si缓冲层上具有Si 1-xGex缓冲层的样品的迁移率没有在渐变缓冲层上的样品增加那么多。原子力显微镜观察表明，应变硅层的表面粗糙度的功率谱根据缓冲层的变化，这种变化可能会影响迁移率的增强。
Strained-Si n-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) were fabricated on molecular-beam epitaxially grown strained Si with various Si1−xGex buffer layers. Effective electron mobility in n-MOSFETs with a Si1−xGex (x=0.2, 0.3) graded buffer layer was 60% higher than that in an unstrained-Si n-MOSFET. However, mobility of samples with a Si1−xGex buffer layer on a low-temperature grown Si buffer layer was not increased as much as that of samples on a graded buffer layer. Atomic-force microscopic observation suggests that the power spectrum of surface roughness of the strained-Si layer varies according to the buffer layer, and this variation may affect the enhancement of mobility.