Nanoimprint lithography
Nanoimprint lithography
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DOI：
10.1116/1.588605
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发表时间：
1996-11-01
影响因子：
1.4
通讯作者：
Renstrom, PJ
中科院分区：
文献类型：
--
作者：
Chou, SY;Krauss, PR;Renstrom, PJ
纳米压印光刻技术是近年来提出和发展起来的一种高通量、低成本、非传统的光刻技术。纳米压印光刻已经展示了25 nm的特征尺寸、70 nm的间距、垂直且光滑的侧壁以及近90度的拐角。进一步的实验研究表明，纳米压印光刻的最终分辨率可达10 nm以下，压印过程可重复，模具耐用。此外，在15 mm × 18 mm的区域上的均匀性得到了证明，如果使用设计更好的压机，均匀性区域可以大得多。在非平坦表面上的纳米压印光刻也已经实现。最后，纳米压印光刻已成功地用于制造纳米光电探测器，硅量子点，量子线，和环形晶体管。(C)1996年美国真空学会。
Nanoimprint lithography, a high-throughput, low-cost, nonconventional lithographic method proposed and demonstrated recently, has been developed and investigated further. Nanoimprint lithography has demonstrated 25 nm feature size, 70 nm pitch, vertical and smooth sidewalls, and nearly 90 degrees corners. Further experimental study indicates that the ultimate resolution of nanoimprint lithography could be sub-10 nm, the imprint process is repeatable, and the mold is durable. In addition, uniformity over a 15 mm by 18 mm area was demonstrated and the uniformity area can be much larger if a better designed press is used. Nanoimprint lithography over a nonflat surface has also been achieved. Finally, nanoimprint Lithography has been successfully used for fabricating nanoscale photodetectors, silicon quantum-dot, quantum-wire, and ring transistors. (C) 1996 American Vacuum Society.