Etching of polysilicon in inductively coupled Cl2 and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenching
Etching of polysilicon in inductively coupled Cl2 and HBr discharges. III. Photoresist mask faceting, sidewall deposition, and microtrenching
复制标题
在感应耦合 Cl2 和 HBr 放电中蚀刻多晶硅。
DOI：
10.1116/1.1481868
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发表时间：
2002
影响因子：
1.4
通讯作者：
H. Sawin
中科院分区：
文献类型：
--
作者：
A. Mahorowala;H. Sawin
在光刻胶掩蔽的多晶硅的高密度Cl 2等离子体蚀刻期间观察到的蚀刻伪影[A. P. Mahorowala和H. H. Sawin，J. Vac. Sci. Technol. B 20，1055（2002）]使用212维Monte Carlo轮廓演化模拟器[A. P. Mahorowala和H. H. Sawin，J. Vac. Sci. Technol. B 20，1064（2002）]。进行了一组用于光刻胶掩蔽的多晶硅特征的Cl蚀刻的轮廓演化模拟，包括两种代表性蚀刻副产物（C和SiCl 2）的等离子体沉积。沉积的程度和小平面，直侧壁，和微沟槽的形成受到强烈的影响，通过竞争的蚀刻和沉积。模拟表明，顶面角由光致抗蚀剂线顶部的表面组成和沉积材料的蚀刻的角度依赖性控制;当Si基副产物沉积较多时，面不太陡。下刻面角和多晶硅侧边角对器件的性能有很大影响。
The etching artifacts observed during the high density Cl2 plasma etching of photoresist-masked polysilicon [A. P. Mahorowala and H. H. Sawin, J. Vac. Sci. Technol. B 20, 1055 (2002)] were analyzed using a 212-dimensional Monte Carlo profile evolution simulator [A. P. Mahorowala and H. H. Sawin, J. Vac. Sci. Technol. B 20, 1064 (2002)]. A set of profile evolution simulations for the Cl etching of photoresist-masked polysilicon features, including plasma deposition of two representative etching byproducts (C and SiCl2) were performed. The extent of deposition and the formation of facets, straight sidewalls, and microtrenches were strongly affected by the competing etching and deposition. The simulations suggested that the top facet angle was controlled by the surface composition at the top of the photoresist lines and the angular dependence for etching of the deposited material; the facet being less steep when there was more deposition of Si-based byproducts. The lower facet angle and the polysilicon sidew...