Growth and Properties of High Quality InAs Single Crystals
Growth and Properties of High Quality InAs Single Crystals
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发表时间：
2006
影响因子：
5.1
通讯作者：
Zhao Youwen;Sun Wenrong;Duan Manlong;Dong Zhi-yuan;Yang Zixiang;Lü Xuru;Wang Yingli
中科院分区：
文献类型：
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作者：
Zhao Youwen;Sun Wenrong;Duan Manlong;Dong Zhi-yuan;Yang Zixiang;Lü Xuru;Wang Yingli
用液封直拉法生长了直径为50mm的和晶向的InAs单晶，研究了n型杂质S、Sn和p型杂质Zn、Mn的偏析行为、晶格硬化效应和掺杂效率，用X射线衍射研究了InAs单晶的晶格完整性。分析了InAs单晶片的化学腐蚀和清洗方法，实现了可外延抛光的InAs单晶片。
We grow 50mm-diameter InAs single crystals of 〈100〉 and 〈111〉 orientations with liquid encapsulated Czochralski (LEC) method.The segregation behavior,lattice hardening effect,and doping efficiency of n-type impurities S, Sn and p-type impurities Zn, Mn are studied.The lattice perfection of the InAs single crystal is studied with X-ray diffraction.The polishing,chemical etching and cleaning of an InAs wafer are analyzed.An epi-ready InAs polished single crystal wafer is realized.