High-power hybrid GaN-based green laser diodes with ITO cladding layer
High-power hybrid GaN-based green laser diodes with ITO cladding layer
复制标题
具有 ITO 熔覆层的高功率混合 GaN 基绿光激光二极管
DOI：
10.1364/prj.381262
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发表时间：
2020-03-01
影响因子：
7.6
通讯作者：
Yang, Hui
中科院分区：
文献类型：
--
作者：
Hu, Lei;Ren, Xiaoyu;Yang, Hui
绿色激光二极管(LD)在可见光和近红外光谱范围内的表现仍然最差，这被称为“绿色缺口”。绿色激光二极管的性能差主要与p型AlGaN包层有关，它一方面在外延生长过程中给InGaN量子阱(QW)带来了巨大的热预算，另一方面也导致了较差的电学性能，特别是在生长温度较低的情况下。在这项工作中，我们证明了具有ITO p包层的混合LD结构可以获得低至1.6kA/cm(2)的阈值电流密度，仅为传统LD结构的三分之一。这一改进归功于ITO包覆层带来的两个好处。一种是减小p-AlGaN层厚度对量子阱施加的热预算，另一种是增加空穴浓度，因为低Al含量的p-AlGaN包覆层可以用于混合LD结构。此外，混合绿光二极管的斜率效率提高了25%，工作电压降低了0.6V。最终得到了400 mW的高功率绿光激光器。这些结果表明，混合LD结构可以为高性能绿色半导体激光器铺平道路。(三)2020中国激光出版社
Green laser diodes (LDs) still perform worst among the visible and near-infrared spectrum range, which is called the "green gap." Poor performance of green LDs is mainly related to the p-type AlGaN cladding layer, which on one hand imposes large thermal budget on InGaN quantum wells (QWs) during epitaxial growth, and on the other hand has poor electrical property especially when low growth temperature has to be used. We demonstrate in this work that a hybrid LD structure with an indium tin oxide (ITO) p-cladding layer can achieve threshold current density as low as 1.6 kA/cm(2), which is only one third of that of the conventional LD structure. The improvement is attributed to two benefits that are enabled by the ITO cladding layer. One is the reduced thermal budget imposed on QWs by reducing p-AlGaN layer thickness, and the other is the increasing hole concentration since a low Al content p-AlGaN cladding layer can be used in hybrid LD structures. Moreover, the slope efficiency is increased by 25% and the operation voltage is reduced by 0.6 V for hybrid green LDs. As a result, a 400 mW high-power green LD has been obtained. These results indicate that a hybrid LD structure can pave the way toward high-performance green LDs. (C) 2020 Chinese Laser Press