The Minimum Specific on-Resistance of Semi-SJ Device
The Minimum Specific on-Resistance of Semi-SJ Device
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DOI：
10.1109/ted.2018.2881293
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发表时间：
2019-01
影响因子：
3.1
通讯作者：
Wentong Zhang;Chunlan Lai;M. Qiao;Zhaoji Li;Bo Zhang
中科院分区：
文献类型：
--
作者：
Wentong Zhang;Chunlan Lai;M. Qiao;Zhaoji Li;Bo Zhang
本文实现了半超结(Semi-SJ)器件的最小比导通电阻。在我们以前工作中类似的SJ优化方法的基础上，通过对半SJ和N-缓冲区进行优化来搜索半SJ的最小$\Text{R}_{\mathm{\Scriptstyle on}，\Textsf{SP}}$。所提出的设计公式分别给出了半SJ区的最佳掺杂浓度Text{N}_{\Textsf{Sj}}$、N-缓冲区的最佳掺杂浓度Text{N}_{\Textsf{B}}$和长度为$\Text{L}_{\Textsf{B}的最佳掺杂浓度。以1000V和1500V半固态焦耳器件为例，用该公式进行了设计。计算结果与模拟结果吻合较好。仿真结果与已有实验结果的比较表明，本文提出的优化方案在相同击穿电压下，即使在较短的SJ长度的情况下，也能实现较低的Text{R}、Textsf{SP}、Textsf{SP}。
The minimum specific ON-resistance $\text{R}_{ \mathrm{\scriptscriptstyle ON},\textsf {sp}}$ of the semisuperjunction (semi-SJ) device is realized in this paper. Based on the similar SJ optimization method in our previous works, the minimum $\text{R}_{ \mathrm{\scriptscriptstyle ON},\textsf {sp}}$ of the semi-SJ is searched by optimizing both the semi-SJ and the N-buffer regions. The proposed design formulas give the optimized doping concentration $\text{N}_{\textsf {SJ}}$ of the semi-SJ region, doping concentration $\text{N}_{\textsf {B}}$ , and length $\text{L}_{\textsf {B}}$ of the N-buffer region, respectively. As examples, 1000- and 1500-V semi-SJ devices are designed with the formulas. The calculated results are in a good agreement with the simulations. The comparisons between the simulations and the existing experiments demonstrate that the optimization in this paper realizes lower $\text{R}_{ \mathrm{\scriptscriptstyle ON},\textsf {sp}}$ under the same breakdown voltage $\text{V}_{\textsf {B}}$ even with a shorter SJ length.