Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation
Corrugated Heterojunction Metal-Oxide Thin-Film Transistors with High Electron Mobility via Vertical Interface Manipulation
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DOI：
10.1002/adma.201804120
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发表时间：
2018-10-04
影响因子：
29.4
通讯作者：
Park, Sung Kyu
中科院分区：
文献类型：
--
作者：
Lee, Minuk;Jo, Jeong-Wan;Park, Sung Kyu
A new strategy is reported to achieve high-mobility, low-off-current, and operationally stable solution-processable metal-oxide thin-film transistors (TFTs) using a corrugated heterojunction channel structure. The corrugated heterojunction channel, having alternating thin-indium-tin-zinc-oxide (ITZO)/indium-gallium-zinc-oxide (IGZO) and thick-ITZO/IGZO film regions, enables the accumulated electron concentration to be tuned in the TFT off- and on-states via charge modulation at the vertical regions of the heterojunction. The ITZO/IGZO TFTs with optimized corrugated structure exhibit a maximum field-effect mobility >50 cm(2) V-1 s(-1) with an on/off current ratio of >10(8) and good operational stability (threshold voltage shift
