Relative intensity noise measurements of 5 μm quantum cascade laser and 1.55 μm semiconductor laser
Relative intensity noise measurements of 5 μm quantum cascade laser and 1.55 μm semiconductor laser
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5 μm量子级联激光器和1.55 μm半导体激光器的相对强度噪声测量
DOI：
10.1049/el:20080795
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发表时间：
2008
影响因子：
1.1
通讯作者：
T. Edamura
中科院分区：
文献类型：
--
作者：
Y. Takagi;N. Kumazaki;M. Ishihara;K. Kasahara;A. Sugiyama;N. Akikusa;T. Edamura
将5 μ m分布反馈量子级联激光器（DFB-QCL）的相对强度噪声（RIN）的大小与传统的1.55 μ m DFB激光二极管（LD）进行了比较。在10 mW光输出下，DFB-QCL在1 MHz频率下的RIN为157 dBm，比DFB-LD高出约5 dB，这几乎可以完全用半经典噪声模型解释。没有观察到共振隧穿引起的噪声，这可能是RIN退化的原因。
The magnitude of the relative intensity noise (RIN) of a 5 mum distributed-feedback quantum cascade laser (DFB-QCL) was compared with a conventional 1.55 mum DFB laser diode (LD). The RIN for the DFB-QCL at a frequency of 1 MHz was 157 dBm at 10 mW light output, about 5 dB higher than that of the DFB-LD, which could almost be fully explained by the semi-classical noise model. The resonant tunnelling induced noise, which might be a cause of the RIN degradation, was not observed.