Refining of tantalum by silicon deoxidation
Refining of tantalum by silicon deoxidation
复制标题
硅脱氧精炼钽
DOI：
10.1016/s0925-8388(97)00433-7
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发表时间：
1998
影响因子：
6.2
通讯作者：
S. P. Garg
中科院分区：
文献类型：
--
作者：
A. Awasthi;N. Krishnamurthy;Y. J. Bhatt;R. Venkataramani;Y. Ueda;S. P. Garg
研究了利用硅脱氧（以 SiO(v) 形式）进行热真空处理以去除钽中的残余氧。基于固溶体中硅和氧活度的实验值或估计值以及低氧化钽（TaO（v））和一氧化硅（SiO（v））形成的标准自由能的计算表明了通过优先蒸发SiO（v）从Ta-Si-O固溶体中消除氧的可能性。将已知硅和氧含量的Ta-Si-O合金在2073至2273 K、1×10−3Pa压力下处理2 h获得的实验结果表明发生了硅脱氧。在此温度范围内，与不含硅的 Ta-O 合金相比，含硅的 Ta-O 合金中的氧去除速度更快且残留水平更低。当硅和氧浓度都达到相对较低的水平时，即 ≈1 at% O 和 0.3 at% Si，SiO(v) 蒸发去除的氧随着牺牲脱氧（如 TaO(v)）的贡献增加而减少。
The removal of residual oxygen from tantalum by pyrovacuum treatment using silicon deoxidation (as SiO(v)) was studied. The possibility of eliminating oxygen from a Ta–Si–O solid solution by preferential evaporation of SiO(v)was indicated by calculations based on the experimental or estimated values for the activities of silicon and oxygen in the solid solution as well as for the standard free energies of formation of tantalum suboxide (TaO(v)) and silicon monoxide (SiO(v)). The experimental results obtained by treating Ta–Si–O alloys of known silicon and oxygen contents at temperatures ranging from 2073 to 2273 K under 1×10−3Pa pressure for 2 h indicated the occurrence of silicon deoxidation. In this temperature range, oxygen removal has occurred faster and to a lower residual level in Ta–O alloys containing silicon as compared to Ta–O alloys containing no silicon. When both silicon and oxygen concentrations have reached relatively lower levels, viz., ≈1 at% O and 0.3 at% Si, oxygen removal by SiO(v)vapourisation decreases with an increasing contribution of sacrificial deoxidation (as TaO(v)).