Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors
复制标题
背照式 CMOS 图像传感器中快中子引起的位移损伤效应
DOI：
10.1080/00223131.2020.1751323
复制
发表时间：
2020
影响因子：
1.2
通讯作者：
Qi Guo
中科院分区：
文献类型：
--
作者：
Xiang Zhang;Yudong Li;Lin Wen;Jie Feng;Dong Zhou;Yulong Cai;Bingkai Liu;Jing Fu;Qi Guo
ABSTRACT BackSide-Illuminated (BSI) CMOS Image Sensors (CISs), with developed performance on quantum efficiency and sensitivity, have been applied for aerospace missions and gradually replaced FrontSide-Illuminated (FSI) CISs. Two types of BSI CISs with different epitaxial layer thicknesses were irradiated by 14-MeV neutron up to 3.40 × 1011 n/cm2 to analyze the degradation induced by neutron irradiation. Dark current, dark current distribution, full well capacity, and spectral response were tested before and after the neutron irradiation and at different annealing time points with various temperatures. The results were analyzed to characterize the degradation introduced by the unique backside passivation layer, and the converse illuminated direction. The interface states induced by displacement damage effects at the backside passivation layer were considered as a novel origin of dark current which was not involved in FSI CISs.
