Reduction of random telegraph noise in High-к / metal-gate stacks for 22 nm generation FETs
Reduction of random telegraph noise in High-к / metal-gate stacks for 22 nm generation FETs
复制标题
减少 22 nm 代 FET 的 High-к/金属栅极堆栈中的随机电报噪声
DOI：
10.1109/iedm.2009.5424225
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
K. Torii
中科院分区：
文献类型：
--
作者：
N. Tega;H. Miki;Z. Ren;C. D'Emic;Y. Zhu;D. Frank;J. Cai;M. Guillorn;D. Park;W. Haensch;K. Torii
这项工作表明，第一次，随机电报噪声（RTN）的减少高к /金属栅（HK / MG）堆栈纳入22纳米代FET。已经制造、测量和分析了数千个这样的FET，使用统计技术将RTN作为主要噪声分量与1/f噪声作为次要分量分离。基于对这些FET的统计比较，我们发现高温形成气体退火可以抑制RTN阈值电压变化（ΔVth）。此外，适当退火的HK FET比锡永FET具有更小的RTN ΔVth，这主要是由于HK / MG中的陷阱更少，部分是由于更薄的反转厚度。基于这些结果，我们预计，随机掺杂剂波动将有更大的影响SRAM产量比RTN，直到至少15纳米代，掺杂沟道FET。
This work demonstrates, for the first time, the reduction of random telegraph noise (RTN) in high-к / metal gate (HK / MG) stacks incorporated in 22 nm generation FETs. Many thousands of such FETs have been fabricated, measured, and analyzed using a statistical technique to separate RTN as a major noise component from 1/f noise as a minor component. Based on a statistical comparison of these FETs, we find that high temperature forming gas annealing can suppress RTN threshold voltage variation (ΔVth). In addition, properly annealed HK FETs have smaller RTN ΔVth than SiON FETs, due mostly to fewer traps and partly to thinner inversion thickness in HK / MG. Based on these results, we project that random dopant fluctuations will have a greater impact on SRAM yield than RTN until at least the 15 nm generation, for doped channel FETs.