Enhancement of resistivity of Czochralski silicon by deep level manganese doping
Enhancement of resistivity of Czochralski silicon by deep level manganese doping
复制标题
深层锰掺杂提高直拉硅的电阻率
DOI：
10.1063/1.2349836
复制
发表时间：
2006
影响因子：
4
通讯作者：
P. Wilshaw
中科院分区：
文献类型：
--
作者：
Kanad Mallik;C. H. Groot;P. Ashburn;P. Wilshaw
深锰锰掺杂已被用于制备高电阻率单晶硅衬底。离子注入Mn的剂量为10^14 cm^？在100 keV下，在800°C下快速退火36 s。晶圆片的电阻率从未掺杂衬底的600欧姆厘米提高到mn掺杂衬底的最大10欧姆厘米。用深能级杂质掺杂补偿理论模型对实验数据进行了验证。获得的这种电阻率水平适用于制造射频器件的硅片上集成。
Deep level manganese Mn doping has been used to fabricate very high resistivity single crystal silicon substrates grown by the Czochralski method. The Mn has been introduced by ion implantation with a dose of 10^14 cm^?2 of Mn at 100 keV followed by rapid thermal annealing at 800 °C for 36 s. The resistivity of the wafer is enhanced from 600 ohm cm for the undoped substrate to a maximum of 10 kohm cm for the Mn-doped substrate. The experimental data are corroborated using a theoretical model for doping compensation due to deep level impurities. This level of obtained resistivity is suitable for making silicon on-chip integration of radio frequency devices.