High Mobility in a Stable Transparent Perovskite Oxide
High Mobility in a Stable Transparent Perovskite Oxide
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DOI：
10.1143/apex.5.061102
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发表时间：
2012-06-01
影响因子：
2.3
通讯作者：
Char, Kookrin
中科院分区：
文献类型：
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作者：
Kim, Hyung Joon;Kim, Useong;Char, Kookrin
我们发现具有钙钛矿结构的La掺杂BaSnO_3在保持其光学透明性的同时，在室温下具有前所未有的高迁移率。在单晶中，当掺杂浓度为8×10(19)cm(-3)时，迁移率达到320 cm(2)V-1 S(-1)，是宽带隙半导体中最高的。在外延薄膜中，当掺杂浓度为4：4×10(20)cm(-3)时，最大迁移率为70 cm(2)V-1 S(-1)。我们还发现，即使在空气中经过530℃的热循环，(Ba，La)SnO_3的电阻变化也很小，这表明氧原子具有不同寻常的稳定性，在实现透明高频、高功率功能器件方面具有巨大的潜力。(C)2012年日本应用物理学会
We discovered that La-doped BaSnO3 with the perovskite structure has an unprecedentedly high mobility at room temperature while retaining its optical transparency. In single crystals, the mobility reached 320 cm(2) V-1 s(-1) at a doping level of 8 x 10(19) cm(-3), constituting the highest value among wide-band-gap semiconductors. In epitaxial films, the maximum mobility was 70 cm(2) V-1 s(-1) at a doping level of 4: 4 x 10(20) cm(-3). We also show that resistance of (Ba, La)SnO3 changes little even after a thermal cycle to 530 degrees C in air, pointing to an unusual stability of oxygen atoms and great potential for realizing transparent high-frequency, high-power functional devices. (C) 2012 The Japan Society of Applied Physics