Enhanced microLED efficiency via strategic pGaN contact geometries
Enhanced microLED efficiency via strategic pGaN contact geometries
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DOI：
10.1364/oe.425800
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发表时间：
2021-05-10
期刊：
影响因子：
3.8
通讯作者：
Kymissis, Ioannis
中科院分区：
文献类型：
--
作者：
Behrman, Keith;Kymissis, Ioannis
微型发光二极管（microLED）结构进行了建模和验证与制造的设备，以研究p型GaN（pGaN）的接触尺寸对功率输出效率的依赖性。研究了两种方案：恒定的10 μ m直径pGaN接触和变化的微发光二极管尺寸，以及具有变化的接触尺寸的恒定的10 μ m直径微发光二极管。模拟器件显示，通过增加microLED管芯尺寸，输出功率提高了17%。制造的设备遵循相同的趋势，功率输出提高了70%。恒定尺寸和变化的内部接触尺寸的建模的microLED器件在不同的电流密度下对于各种接触尺寸显示出优化的功率输出。特别地，较低的电流密度示出了针对较小pGaN接触的优化输出，并且在高电流注入处的不期望的效率损失与防止表面复合损失之间的平衡中，针对较高电流密度，趋向于较大接触。我们表明，对于所有的器件几何形状，它是优先收缩的pGaN接触，以最大限度地提高效率，通过抑制表面复合损失和进一步的改进应仔细考虑，以优化所需的操作亮度的效率。(C)根据OSA开放获取出版协议的条款，2021年美国光学学会
Micro light-emitting diode (microLED) structures were modeled and validated with fabricated devices to investigate p-type GaN (pGaN) contact size dependence on power output efficiency. Two schemes were investigated: a constant 10 mu m diameter pGaN contact and varying microLED sizes and a constant 10 mu m diameter microLED with varying contact sizes. Modeled devices show a 17% improvement in output power by increasing the microLED die size. Fabricated devices followed the same trend with a 70% improvement in power output. Modeled microLED devices of a constant size and varying inner contact sizes show optimized power output at different current densities for various contact sizes. In particular, lower current densities show optimized output for smaller pGaN contacts and trend towards larger contacts for higher current densities in a balance between undesirable efficiency losses at high-current injection and preventing surface recombination losses. We show that for all device geometries, it is preferential to shrink the pGaN contact to maximize efficiency by suppressing surface recombination losses and further improvements should be carefully considered to optimize efficiency for a desired operational brightness. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement