The Fermi level position in doped amorphous silicon
The Fermi level position in doped amorphous silicon
复制标题
掺杂非晶硅中的费米能级位置
DOI：
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发表时间：
1979
期刊：
影响因子：
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通讯作者：
P. L. Comber
中科院分区：
文献类型：
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作者：
R. H. Williams;R. R. Varma;W. Spear;P. L. Comber
通过光电子能谱测定了辉光放电非晶硅薄膜的费米能随替代掺杂的变化。如此获得的 n 型和 p 型样品的值与电导率活化能预期的偏移非常一致，并证实费米能级可以在非晶硅的大部分迁移率间隙中移动。数据还表明，Si-SiO2 界面处的表面态密度极低，因此场效应实验的信息应该能够代表体态。
The shift of the Fermi energy with substitutional doping has been determined for glow-discharge amorphous silicon films by photoelectron spectroscopy. The values so obtained for n- and p-type specimens are in good agreement with the shift expected from the activation energy of the electrical conductivity and confirm that the Fermi level can be moved throughout most of the mobility gap of amorphous silicon. The data also show that the surface-state density at the Si-SiO2 interface is extremely low, so that information from field-effect experiments should be representative of the bulk states.