Interface trap behavior in irradiated metal‐oxide‐silicon structures
Interface trap behavior in irradiated metal‐oxide‐silicon structures
复制标题
辐照金属-氧化物-硅结构中的界面陷阱行为
DOI：
10.1063/1.334079
复制
发表时间：
1984
期刊：
影响因子：
--
通讯作者：
K. Rydén
中科院分区：
文献类型：
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作者：
Christer Jörgensen;C. Svensson;K. Rydén
我们用深能级瞬态谱（DLTS）和电子自旋共振（ESR）研究了氧化硅的界面态。在软X射线照射前后进行测量。在照射前，使用两种方法观察到对应于DLTS 0.3-eV峰的ESR Pb峰。照射后，它是不变的，当我们使用ESR，而DLTS显示出的带隙的界面态的数量普遍增加。在DLTS信号中，在0.3-eV峰所在的区域中没有看到结构。因此，我们已经表明，软X射线照射不会影响Pb界面陷阱，但它会引起非ESR活性界面陷阱的广泛分布。
We have used deep level transient spectroscopy (DLTS) and electron spin resonance (ESR) to investigate the interface states on oxidized silicon. Measurements were performed before and after soft x‐ray irradiation. Before irradiation, the ESR Pb peak, corresponding to the DLTS 0.3‐eV peak, was observed using both methods. After irradiation, it was unchanged when we used ESR, whereas DLTS showed a general increase in the number of interface states over the band gap. No structure in the DLTS signal was seen in the region where the 0.3‐eV peak is situated. We have thus shown that soft x‐ray irradiation does not affect the Pb interface trap, but that it gives rise to a broad distribution of non‐ESR‐active interface traps, instead.