Single Electron Memory Devices Based on Plasma-Derived Silicon Nanocrystals
Single Electron Memory Devices Based on Plasma-Derived Silicon Nanocrystals
复制标题
基于等离子体衍生硅纳米晶体的单电子存储器件
DOI：
10.1143/jjap.39.l855
复制
发表时间：
2000
影响因子：
1.5
通讯作者：
S. Oda
中科院分区：
文献类型：
--
作者：
A. Dutta;Y. Hayafune;S. Oda
单电子非易失性存储器器件使用窄且短的沟道晶体管和硅纳米晶体作为浮栅来制造。硅纳米晶体通过甚高频等离子体处理沉积。这种沉积技术不仅提供了对点尺寸的控制，而且还保证了对隧道氧化物厚度的精确控制。在77K下观察到了单电子充电效应。
Single electron nonvolatile memory devices are fabricated using a narrow and short channel transistor and silicon nanocrystals as a floating gate. The silicon nanocrystals are deposited by very-high-frequency plasma processing. This deposition technique offers not only control of the dot size but also promises precise control of the tunnel oxide thickness. A single electron charging effect is observed for such devices at 77 K.