Growth and properties of Mg-doped in-polar InN films
Growth and properties of Mg-doped in-polar InN films
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DOI：
10.1063/1.2741124
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发表时间：
2007-05-14
影响因子：
4
通讯作者：
Yoshikawa, Akihiko
中科院分区：
文献类型：
--
作者：
Wang, Xinqiang;Che, Song-Bek;Yoshikawa, Akihiko
采用分子束外延技术在GaN模板上进行了不同镁流量的In-An层中的镁掺杂，并对其电学和光学性质进行了研究。镁离子浓度与镁束流密度呈线性关系，表明镁离子粘着系数几乎为1。掺镁后，电子浓度由于载流子补偿效应而降低，但随着镁离子通量的进一步增加，电子浓度开始增加，这是由于形成了与镁有关的施主缺陷。对于部分载流子补偿的掺镁InN，观察到了两个光致发光峰，一个来自自由到受主的发射，受主激活能约为61 meV，另一个与传统的带间发射相似。(C)2007年美国物理研究所。
Mg doping into In-polar InN layers for different Mg fluxes is performed on GaN templates by molecular beam epitaxy, and their electrical and optical properties are investigated. Mg concentration is linearly proportional to Mg-beam flux, indicating that the Mg-sticking coefficient is almost unity. With Mg doping, electron concentration decreases by the effect of carrier compensation, but it begins to increase with further increasing Mg flux because of Mg-related donorlike-defects formation. For the partially carrier-compensated Mg-doped InN, two photoluminescence peaks are observed; one is originated from free-to-acceptor emission with an acceptor activation energy of about 61 meV and the other is similar to the conventional band-to-band emission. (C) 2007 American Institute of Physics.