Cyclotron emission from quantized Hall devices: Injection of nonequilibrium electrons from contacts
Cyclotron emission from quantized Hall devices: Injection of nonequilibrium electrons from contacts
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量子化霍尔器件的回旋发射：从接触处注入非平衡电子
DOI：
10.1103/physrevb.59.12537
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发表时间：
1999
影响因子：
3.7
通讯作者：
S. Komiyama
中科院分区：
文献类型：
--
作者：
Y. Kawano;Y. Hisanaga;S. Komiyama
在量子霍尔效应装置中对与非平衡电子朗道能级间跃迁相关的回旋辐射发射进行了实验研究。经证实，当观察回旋加速器发射（CE）时，纵向电阻和接触电阻都消失了。对于CE，发现临界源漏电压${V}_{\mathrm{SD}}$存在于${V}_{\mathrm{SD}}=\ensuremath{\Elzxh}{\ensuremath{\omega}}_{c}/2e,$，其中 $\ensuremath{\Elzxh}{\ensuremath{\omega}}_{c}$ 是朗道能级间的能量间距。空间分辨测量表明，CE 发生在霍尔条的当前入口角和出口角（“热点”）。讨论了理想电流接触的模型。源极侧的CE被解释为由于来自源极接触的非平衡电子的注入而引起，漏极侧的CE被解释为由于漏极接触处形成的陡峭势壁引起的朗道能级间电子隧道效应。
Emissions of cyclotron radiation associated with the inter-Landau-level transition of nonequilibrium electrons are experimentally studied in quantum-Hall-effect devices. It is confirmed that both the longitudinal resistance and the contact resistance are vanishing when the cyclotron emission (CE) is being observed. For the CE, a critical source-drain voltage ${V}_{\mathrm{SD}}$ is found to exist at ${V}_{\mathrm{SD}}=\ensuremath{\Elzxh}{\ensuremath{\omega}}_{c}/2e,$ where $\ensuremath{\Elzxh}{\ensuremath{\omega}}_{c}$ is the inter-Landau-level energy spacing. Spatially resolved measurements reveal that the CE takes place at both of the current entry and exit corners (``hot spots'') of the Hall bars. A model of ideal current contacts is discussed. The CE on the source side is interpreted as being due to injection of nonequilibrium electrons from the source contact, and the CE on the drain side as due to an inter-Landau-level electron tunneling caused by a steep potential wall formed at the drain contact.