Low resistance ohmic contacts to n-GaN and n-AlGaN using NiAl
Low resistance ohmic contacts to n-GaN and n-AlGaN using NiAl
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使用 NiAl 与 n-GaN 和 n-AlGaN 进行低电阻欧姆接触
DOI：
10.1063/1.126983
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发表时间：
2000
影响因子：
4
通讯作者：
Y. Chang
中科院分区：
文献类型：
--
作者：
D. Ingerly;Yong Chen;R. S. William;T. Takeuchi;Y. Chang
金属间化合物NiAl （50:50 at）。%)已被证明是n-GaN和n-AlGaN的低电阻欧姆接触。在850℃退火5 min后，n- gan （n=2.5×1017 cm−3）上的NiAl触点的比接触电阻为9.4×10−6 Ω cm2。在n- al0.12 ga0.88 n （n=2.4×1018 cm−3）和n- al0.18 ga0.82 n （n=2.7×1018 cm−3）中900°C退火5min的NiAl触点的比接触电阻分别为2.1×10−5 Ω cm2和4.7×10−5 Ω cm2。此外，这些触点在600°C下长期退火100小时。在n-GaN上，长期退火后，接触比接触电阻从9.4×10−6 Ω cm2降至5.3×10−5 Ω cm2。接触n-Al0.18Ga0.82N时，随着接触电阻从4.7×10−5 Ω cm2到9.2×10−5 Ω cm2的变化，接触电阻只有轻微的退化。这些结果表明，NiAl作为一种稳定、低电阻的触点具有很大的前景，特别是在高温应用中使用的n-AlGaN。
The intermetallic compound NiAl (50:50 at. %) has been shown to be a low-resistance ohmic contact to n-GaN and n-AlGaN. NiAl contacts on n-GaN (n=2.5×1017 cm−3) had a specific contact resistance of 9.4×10−6 Ω cm2 upon annealing at 850 °C for 5 min. NiAl contacts annealed at 900 °C for 5 min in n-Al0.12Ga0.88N (n=2.4×1018 cm−3) and n-Al0.18Ga0.82N (n=2.7×1018 cm−3) had specific contact resistances of 2.1×10−5 Ω cm2 and 4.7×10−5 Ω cm2, respectively. Additionally, these contacts were subjected to long-term annealing at 600 °C for 100 h. On n-GaN, the contact specific contact resistance degraded from 9.4×10−6 Ω cm2 to 5.3×10−5 Ω cm2 after the long-term anneal. Contacts to n-Al0.18Ga0.82N showed only slight degradation with a change in contact resistance, from 4.7×10−5 Ω cm2 to 9.2×10−5 Ω cm2. These results demonstrate the NiAl has great promise as a stable, low-resistance contact, particularly to n-AlGaN used in high-temperature applications.